型号:

IRFSL3607PBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 75V 80A TO-262
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFSL3607PBF PDF
产品目录绘图 IR Hexfet TO-262
标准包装 50
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 75V
电流 - 连续漏极(Id) @ 25° C 80A
开态Rds(最大)@ Id, Vgs @ 25° C 9 毫欧 @ 46A,10V
Id 时的 Vgs(th)(最大) 4V @ 100µA
闸电荷(Qg) @ Vgs 84nC @ 10V
输入电容 (Ciss) @ Vds 3070pF @ 50V
功率 - 最大 140W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 TO-262
包装 管件
产品目录页面 1519 (CN2011-ZH PDF)
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